nanometer
21nanometer — nano·meter …
22nanometer — nan•o•me•ter [[t]ˈnæn əˌmi tər, ˈneɪ nə [/t]] n. wam a unit of measure equal to one billionth of a meter Abbr.: nm 1) • Etymology: 1960–65 …
23Nanometer — Na|no|me|ter (Zeichen nm) …
24nanometer — noun a metric unit of length equal to one billionth of a meter • Syn: ↑nanometre, ↑nm, ↑millimicron, ↑micromillimeter, ↑micromillimetre • Hypernyms: ↑metric linear unit • Part Holony …
2532 nanometer — The 32 nanometer (32 nm) process (also called 32 nanometer node) is the next step after the 45 nanometer process in CMOS manufacturing and fabrication. 32 nm refers to the expected average half pitch of a memory cell at this technology level. The …
2690 nanometer — The 90 nanometer (90 nm) process refers to the level of CMOS process technology that was reached in the 2002 2003 timeframe, by most leading semiconductor companies, like Intel, AMD, Infineon, Texas Instruments, IBM, and TSMC. The origin of the… …
2765 nanometer — The 65 nanometer (65 nm) process is an advanced lithographic node used in volume CMOS semiconductor fabrication. Printed linewidths (i.e., transistor gate lengths) can reach as low as 25 nm on a nominally 65 nm process, while the pitch between… …
2816 nanometer — The 16 nanometer (16 nm) node is the technology node following the 22 nm node. The exact naming of the technology nodes comes from the International Technology Roadmap for Semiconductors (ITRS). By conservative ITRS estimates the 16 nm technology …
2945 nanometer — Per the [http://www.itrs.net/reports.html International Technology Roadmap for Semiconductors] , the 45 nm technology node should refer to the average half pitch of a memory cell manufactured at around the 2007 2008 time frame.Matsushita and… …
3022 nanometer — The 22 nanometer (22 nm) node is the CMOS process step following 32 nm. It is expected to be reached by semiconductor companies in the 2011 ndash;2012 timeframe. At that time, the typical half pitch for a memory cell would be around 22 nm. The… …
